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APTGF200DA120D3G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80C 3 Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Q2 6 7 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 300 200 400 20 1400 400A@1150V Unit V A V W September, 2008 1-5 APTGF200DA120D3G - Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF200DA120D3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Min Typ 3.2 3.9 5.8 Max 5 3.7 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=200A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 200A RG = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A RG = 4.7 VGE = 15V Tj = 125C VBus = 600V IC = 200A Tj = 125C RG = 4.7 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 13 1 2.1 100 60 530 30 110 70 550 40 19 mJ 15 1300 A Max Unit nF C ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRRM IF VF trr Qrr Err Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 750 1000 Unit V A A September, 2008 2-5 APTGF200DA120D3G - Rev 0 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 200A 200 2.1 1.9 100 200 14 40 5.2 11.2 V ns C mJ IF = 200A VR = 600V di/dt =3000A/s www.microsemi.com APTGF200DA120D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.09 0.16 150 125 125 5 5 350 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g D3 Package outline (dimensions in mm) 1 A DETAIL A www.microsemi.com 3-5 APTGF200DA120D3G - Rev 0 September, 2008 APTGF200DA120D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 TJ = 125C VGE=20V VGE=12V VGE=15V 400 TJ=25C 300 IC (A) 300 IC (A) 200 200 VGE=9V 100 TJ=125C 100 0 0 1 2 3 VCE (V) 4 5 6 0 0 1 2 3 4 VCE (V) 5 6 400 Transfert Characteristics 60 50 40 Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 4.7 TJ = 125C 300 IC (A) E (mJ) Eon 200 TJ=125C 30 20 Eoff 100 TJ=25C 10 0 Err 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 100 80 E (mJ) 60 40 20 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 VCE = 600V VGE =15V IC = 200A TJ = 125C Eon 0 100 200 IC (A) 300 400 Reverse Bias Safe Operating Area 500 400 IC (A) 300 200 100 Eoff Err VGE=15V TJ=125C RG=4.7 0 0 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 Thermal Impedance (C/W) 0.08 0.06 0.5 0.04 0.02 0.3 0.1 0.05 0 0.00001 0.0001 0.001 0.9 0.7 IGBT Single Pulse 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF200DA120D3G - Rev 0 September, 2008 APTGF200DA120D3G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 50 100 150 IC (A) 200 250 hard switching ZCS ZVS VCE=600V D=50% RG=4.7 TJ=125C TC=75C Forward Characteristic of diode 400 300 TJ=125C IF (A) 200 TJ=25C 100 0 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF200DA120D3G - Rev 0 September, 2008 |
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